Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
Authors:
- Mohd Sharizal AliasMAMohd Sharizal Alias
- Jorge A. Holguin-LermaJHJorge A. Holguin-Lerma
- Edgars StegenburgsESEdgars Stegenburgs
- Abdullah A. AlatawiAAAbdullah A. Alatawi
- Islam AshryIAIslam Ashry
- Ram Chandra SubediRSRam Chandra Subedi
- Davide PrianteDPDavide Priante
- Mohammad Khaled ShakfaMSMohammad Khaled Shakfa
- Tien Khee NgTNTien Khee Ng
Open Access
- 5 July 2018
- journal article
- review article
- Published by SPIE-Intl Soc Optical Eng in Journal of Nanophotonics
- Vol. 12 (04) , 043508-56
Abstract
The ultraviolet (UV) wavelength regime is typically divided into four wavelength ranges, i.e., UV-A (320 to 400 nm), UV-B (280 to 320 nm), UV-C (200 to 280 nm), and vacuum-UV (10 to 200 nm). Across these ranges, there are huge needs to realize UV-based photonic and electronic devices, e.g., laser diodes (LDs), light-emitting diodes (LEDs), photodetectors (PDs), high-electron-mobility transistors (HEMTs), metal-oxide-semiconductor field effect transistors, and radio-frequency switches. For instance, the market forecast for UV-LEDs is increasing from $90 million in the year 2014 to $800 million by the year 2020 due to the increasing demands in epoxy curing, water purification, food or medical sterilization, and new emerging applications.1 The new applications include light sources, lithography, gas or chemical or bioagent sensing, free-space nonline-of-sight communication, phototherapy, forgery detection, medical diagnostic, consumer electronics, and horticulture.2Keywords
Funding Information
- King Abdullah University of Science and Technology (BAS/1/1614-01-01)
- King Abdulaziz City for Science and Technology (TIC R2-FP-008)
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