Permanent degradation of GaAs tunnel diodes
Authors:
- 30 November 1964
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (11) , 811-821
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAsPhysical Review B, 1963
- Some Factors Affecting the Degradation of GaAs Tunnel DiodesJournal of the Electrochemical Society, 1963
- Evidence for the Existence of High Concentrations of Lattice Defects in GaAsPhysical Review Letters, 1962
- Reversible degradation effects in GaSb tunnel diodesSolid-State Electronics, 1962
- Rapid zinc diffusion in gallium arsenideSolid-State Electronics, 1962
- Peak Current Behavior in Ge Esaki JunctionsJournal of Applied Physics, 1962
- Degenerate Germanium. II. Band Gap and Carrier RecombinationPhysical Review B, 1961
- Current-induced marker motion in gold wiresJournal of Physics and Chemistry of Solids, 1961
- Excess Tunnel Current in Silicon Esaki JunctionsPhysical Review B, 1961
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960