An ultra-thin buffer layer for Ge epitaxial layers on Si
- 25 March 2013
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 102 (12) , 121908
Abstract
Using an Fe3Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe3Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of ∼4% is completely relaxed in the Fe3Si layer. This means that the Fe3Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.Keywords
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