InP Schottky contacts with increased barrier height
Authors:
- O. WadaOWO. Wada
- A. MajerfieldAMA. Majerfield
- P.N. RobsonPRP.N. Robson
- 1 May 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (5) , 381-387
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Characteristics of MOS solar cells built on (n-type) InP substratesIEEE Transactions on Electron Devices, 1980
- A monolithically integrated optical repeaterApplied Physics Letters, 1979
- Metal contacts to silicon and indium-phosphide-cleaved surfaces and the influence of intermediate adsorbed layersJournal of Vacuum Science and Technology, 1979
- Low leakage nearly ideal Schottky barriers to n -InPElectronics Letters, 1978
- Electrical characteristics of Au/Ti-(n-type) InP Schottky diodesJournal of Physics D: Applied Physics, 1977
- InP Schottky-gate field-effect transistorsIEEE Transactions on Electron Devices, 1975
- Au - (n-type) InP Schottky barriers and their use in determining majority carrier concentrations in n-type InPJournal of Physics D: Applied Physics, 1973
- Measurement of carrier-concentration profiles in epitaxial indium phosphideElectronics Letters, 1973
- Dependence of Barrier Height of Metal Semiconductor Contact (Au–GaAs) on Thickness of Semiconductor Surface LayerJournal of Applied Physics, 1972
- Fermi Level Position at Metal-Semiconductor InterfacesPhysical Review B, 1964