Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism
Authors:
- Marie KryaskMKMarie Kryask
- Markos TrikeriotisMTMarkos Trikeriotis
- Christine OuyangCOChristine Ouyang
- Sovik ChakrabartySCSovik Chakrabarty
- Emmanuel P. GiannelisEGEmmanuel P. Giannelis
- Christopher K. OberCOChristopher K. Ober
- 1 January 2013
- journal article
- Published by Technical Association of Photopolymers, Japan in Journal of Photopolymer Science and Technology
- Vol. 26 (5) , 659-664
Abstract
Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPSTKeywords
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