Effects of non-uniform triple silicon quantum dots on single electron transistor performance
- 28 September 2026
- journal article
- research article
- Published by Springer Nature in Journal of Computational Electronics
- Vol. 25 (5) , 193
Abstract
No abstract availableKeywords
Funding Information
- Science and Technology Development Fund
This publication has 20 references indexed in Scilit:
- Dynamical Coulomb blockade as a signature of the sign-reversing Cooper pairing potentialPhysical Review B, 2024
- Controlling the dimension of the quantum resonance in CdTe quantum dot superlattices fabricated via layer-by-layer assemblyNature Communications, 2020
- Single-electron transistor: review in perspective of theory, modelling, design and fabricationMicrosystem Technologies, 2020
- Single Electron Tunneling2019
- Analysis of co-tunneling effect in single-electronics simulationJournal of Computational Electronics, 2016
- Fabrication and single-electron-transfer operation of a triple-dot single-electron transistorJournal of Applied Physics, 2015
- Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its PerformanceJournal of Electronic Materials, 2012
- Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arraysJournal of Applied Physics, 2010
- Electronic and level statistics properties of Si/SiO2 quantum dotsPhysica E: Low-dimensional Systems and Nanostructures, 2010
- Band Offsets at theInterface from Many-Body Perturbation TheoryPhysical Review Letters, 2008