Fully Integrated SiGe-BiCMOS Receiver(RX) and Transmitter(TX) Chips for 76.5 GHz FMCW Automotive Radar Systems Including Demonstrator Board Design

Authors:

1 June 2007

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE/MTT-S International Microwave Symposium

p. 1307-1310
DOI:10.1109/mwsym.2007.380434

Abstract

Advancements in SiGe device development enable the realization of 76.5 GHz FMCW automotive long range radar systems using relatively low-cost silicon technology. This paper presents fully integrated receiver (RX) and transmitter (TX) circuits for wide temperature range operations. The TX chips consists of a VCO with two stage power amplifier, frequency divider chain, power detector circuit and operational amplifier to on-chip compensate the temperature drift of the center frequency. The RX chips is based on a 38.25 GHz doubler, a 76.5 GHz LNA, a passive balun, a fully balanced mixer and IF buffer. Also the integration and combination with planar patched antennas on a demonstrator board was discussed.

Keywords

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