Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
- 14 May 2012
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 717-720, 465-468
Abstract
A two-way tunneling model describing simultaneous oxide trap charging and discharging in SiC MOSFETs is presented, along with a comparison with experimental results. This model can successfully account for the variation in threshold-voltage instability observed as a function of bias-stress time, bias-stress magnitude, and measurement time.Keywords
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