An Analytical Model for Potential and Electric Field Distribution of Dual Electrode Doping Less Tunnel Field Effect Transistor

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Abstract
In nanoscale administration, Tunnel field effect transistor (TFET) has demonstrated the most encouraging device as it gives higher Ion/Ioff ratio and steeper Subthreshold swing (SS) than traditional MOSFET. In any case, doped devices experience the ill effects of unexpected intersection and irregular dopant variance (RDF) issues. Along these lines, out of the blue we have propose a 2-D expository model for a surface potential and electric field for a single material gate dual electrode doping less tunnel field effect transistor (SMG-DEDLTFET). Since the proposed show accomplish the coveted focus with the assistance of charge plasma method, we don't have to complete a physical doping which will bring about the concealment of above issues. The model articulation for surface potential and electric field are produced by settling 2-D Poisson's condition under reasonable limit conditions and the outcomes are approved with reenactment aftereffect of SILVACO TCAD device.