Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing
Open Access
- 28 November 2022
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 121 (22) , 222103
Abstract
Although the pulsed operation of AlGaN-based laser diodes at UV-C wavelengths has been confirmed in the previous studies, continuous oscillation without cooling is difficult because of the high operating voltage. In this study, the temperature dependence of key parameters was investigated and their impact on achieving continuous-wave lasing was discussed. A reduction in the threshold voltage was achieved by tapering the sides of the laser diode mesa and reducing the lateral distance between the n- and p-electrodes. As a result, continuous-wave lasing at room temperature was demonstrated at a threshold current density of and a threshold voltage of .
Keywords
Funding Information
- Japan Society for the Promotion of Science (21H04560)
This publication has 24 references indexed in Scilit:
- Emission wavelength dependence of characteristic temperature of InGaN laser diodesApplied Physics Letters, 2013
- Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substratesApplied Physics Letters, 2012
- Thermal characterization of GaN-based laser diodes by forward-voltage methodJournal of Applied Physics, 2012
- Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applicationsphysica status solidi (c), 2011
- Laser machining of structural ceramics—A reviewJournal of the European Ceramic Society, 2009
- Achievements in resonance Raman spectroscopyAnalytica Chimica Acta, 2008
- Highly stable temperature characteristics of InGaN blue laser diodesApplied Physics Letters, 2006
- Temperature and compositional dependence of the energy band gap of AlGaN alloysApplied Physics Letters, 2005
- 100-mW kink-free blue-violet laser diodes with low aspect ratioIEEE Journal of Quantum Electronics, 2003
- High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity NoiseJapanese Journal of Applied Physics, 2002