Stress induced anisotropy in amorphous Gd-Fe and Tb-Fe sputtered films
Authors:
- 1 March 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (B3) , 1642-1644
Abstract
The perpendicular anisotropy caused by the internal planar stress due to the substrate constraint in Gd‐Fe and Tb‐Fe sputtered films was investigated. The internal planar stress σ in these films is found to be very sensitive to preparation conditions, especially to the argon pressure during sputtering, PAr. Stress is compressive for low PAr and tensile for high PAr. The contribution of the stress to the total perpendicular anisotropy varies depending on PAr. Measurement of the anisotropy change before and after the removal of the substrate reveals that the predominant part of the perpendicular anisotropy originates from the internal stress due to the substrate constraint for Tb‐Fe films with a composition of around 30 at.%Tb, where the magnetostriction is extraordinarily large.Keywords
This publication has 8 references indexed in Scilit:
- Magnetoelastic contribution to perpendicular anisotropy in amorphous Gd-Co and Gd-Fe filmsIEEE Transactions on Magnetics, 1978
- Anisotropic Distribution of Atomic Pairs Induced by the Preferential Resputtering Effect in Amorphous Gd-Fe and Gd-Co FilmsJapanese Journal of Applied Physics, 1978
- Microstructure and magnetism in amorphous rare earth–transition metal thin filmsJournal of Applied Physics, 1978
- Magnetoelastic waves in rare-earth intermetallicsJournal of Applied Physics, 1978
- Magnetostriction of amorphous TbxFe1−x thin filmsJournal of Applied Physics, 1978
- Different origin of the perpendicular anisotropy in amorphous Gd-Fe from Gd-Co filmsIEEE Transactions on Magnetics, 1977
- Magnetic Properties of Bias‐Sputtered Gd1−xFex Amorphous FilmsAIP Conference Proceedings, 1976
- Anomalous magnetization of amorphous Tb, Gd, and YPhysical Review B, 1974