Advanced mm-wave ICs and applications
Authors:
- 1 January 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 46-49
Abstract
High performance integrated circuits and modules for millimeter-wave applications based on metamorphic InAlAs/InGaAs HEMTs on 4" GaAs substrates are presented. An extrinsic transit frequency of 410 GHz for 50 nm gate length devices is achieved. The IC process features high yield on both transistor and circuit levels. Two-stage low-noise amplifiers demonstrate a small signal gain of 20 dB and a noise figure of 2.4 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 21 dB at 220 GHz. High-gain modules featuring low-noise performance are discussed which enable novel applications, such as millimeter-wave imaging up to 220 GHz.Keywords
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