The effect of near-interface network strain on proton trapping in SiO/sub 2/
Authors:
- K. VanheusdenKVK. Vanheusden
- P.P. KorambathPKP.P. Korambath
- H.A. KurtzHKH.A. Kurtz
- S.P. KarnaSKS.P. Karna
- D.M. FleetwoodDFD.M. Fleetwood
- W.M. SheddWSW.M. Shedd
- R.D. PughRPR.D. Pugh
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 46 (6) , 1562-1567
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Irradiation response of mobile protons in buried SiO/sub 2/ filmsIEEE Transactions on Nuclear Science, 1997
- Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structuresIEEE Transactions on Nuclear Science, 1997
- Non-volatile memory device based on mobile protons in SiO2 thin filmsNature, 1997
- Mechanism for anneal-induced interfacial charging in SiO2 thin films on SiApplied Physics Letters, 1996
- O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structuresJournal of Applied Physics, 1996
- Point defect generation during high temperature annealing of the Si-SiO2 interfaceApplied Physics Letters, 1993
- Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidenceJournal of Electronic Materials, 1992
- STRUCTURAL ORDERING RELATED TO CHEMICAL BONDS IN RANDOM NETWORKSLe Journal de Physique Colloques, 1981
- Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS CapacitorsIEEE Transactions on Nuclear Science, 1977
- Proton and sodium transport in SiO2filmsIEEE Transactions on Electron Devices, 1967