Increased power from deep ultraviolet LEDs via precursor selection
Authors:
- C. MoeCMC. Moe
- T. OnumaTOT. Onuma
- K. VampolaKVK. Vampola
- N. FellowsNFN. Fellows
- H. MasuiHMH. Masui
- S. NewmanSNS. Newman
- S. KellerSKS. Keller
- S.F. ChichibuSCS.F. Chichibu
- S.P. DenBaarsS.P. DenBaars
- D. EmersonDED. Emerson
- 1 January 2007
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 298, 710-713
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDsJournal of Electronic Materials, 2006
- AlGaN Deep-Ultraviolet Light-Emitting DiodesJapanese Journal of Applied Physics, 2005
- Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN FilmsJapanese Journal of Applied Physics, 2005
- Comparison of the microstructure and chemistry of GaN(0001) films grown using trimethylgallium and triethylgallium on AlN/SiC substratesphysica status solidi (c), 2005
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon CarbideJapanese Journal of Applied Physics, 2005
- Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levelsApplied Physics Letters, 2004
- Influence of MOVPE growth conditions on carbon and silicon concentrations in GaNJournal of Crystal Growth, 2002
- Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgalliumJournal of Crystal Growth, 2001
- Comparison of trimethylgallium and triethylgallium for the growth of GaNApplied Physics Letters, 1997
- Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxyApplied Physics Letters, 1995