Switching Characterization and Low Inter-winding Capacitance Gate Driver Power Supply of 1200V SiC MOSFET for the 300kHz 10kW Inverter
Authors:
- 1 May 2018
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 270-275
Abstract
This paper investigates the turn-on and turn-off switching characterization of 1200V SiC MOSFET by double pulse tester. The experimental setup and measurement techniques are introduced in detailed for accuracy characterization of 1200V SiC MOSFET. Then the phase-leg circuit is built to analyze the switching behavior and gate driver performance at 600V-800V DC bus and high switching frequency. The solution of isolated gate driver power supply and detailed design considerations of low inter-winding capacitance gate driver power supply design is proposed for the 300kHz 10kW inverter. In a gate driver isolated power supply, the inter-winding parasitic capacitance plays a critical role in the mitigation of common mode noise currents created by fast voltage transient responses. The lower the transformer inter-winding capacitance, the more immune the power supply is to fast voltage transient responses. The prototype experimental results validate the design effectiveness for SiC MOSFET based 300kHz 10kW inverter.Keywords
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