Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
Authors:
- Masahiko TaniMTMasahiko Tani
- Kiyomi SakaiKSKiyomi Sakai
- Hajime AbeHAHajime Abe
- Shin-Ichi NakashimaSNShin-Ichi Nakashima
- Hiroshi HarimaHHHiroshi Harima
- Masanori HangyoMHMasanori Hangyo
- Yasunori TokudaYTYasunori Tokuda
- Kyozo KanamotoKKKyozo Kanamoto
- Yuji AbeYAYuji Abe
- Noriaki TsukadaNTNoriaki Tsukada
- 1 September 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (9R)
Abstract
Femtosecond time-resolved reflectance and Raman scattering studies have been made on GaAs epitaxial layers grown at temperatures between 200 and 300° C and subsequently annealed. A subpicosecond carrier lifetime (∼0.25 ps) has been measured for a sample grown at 250° C and annealed at 600° C. Raman measurements using a back scattering geometry show a strong TO phonon band for samples grown at 200° C and 250° C, while it is absent for samples grown at 275 and 300° C. The band width of the LO band increases with decreasing growth temperature. A phonon band corresponding to As precipitates is also observed at 200 cm-1 for samples grown at 200 and 250° C. A strong correlation is found between the measured carrier lifetime and Raman profile.Keywords
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