A comparative study on theoretical and experimental methods using basic electrical parameters of Au/CNTs/lnP/Au–Ge diodes
- 21 January 2020
- journal article
- research article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 824, 153899
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colonyApplied Intelligence, 2012
- Gel-based separation of single-walled carbon nanotubes for metallic and semiconducting fractionsMaterials Research Bulletin, 2011
- Hybrid Nelder–Mead simplex search and particle swarm optimization for constrained engineering design problemsExpert Systems with Applications, 2009
- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbideNature Materials, 2009
- Ultrahigh electron mobility in suspended grapheneSolid State Communications, 2008
- Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodesSemiconductor Science and Technology, 2007
- Effect of dimensionality on the Nelder–Mead simplex methodOptimization Methods and Software, 2006
- Raman spectroscopy of graphitePhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2004
- Interpretation of Raman spectra of disordered and amorphous carbonPhysical Review B, 2000
- Evidence for the double distribution of barrier heights in Schottky diodes fromI-V-TmeasurementsSemiconductor Science and Technology, 1996