Switching in organic polymer films
Authors:
- 15 June 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (12) , 589-591
Abstract
Memory and threshold switching processes are described, as observed in systems consisting of thin (∼0.5 μ) polymer films (polymethylmethacrylate, polystyrene, polyethylmethacrylate, polybutylmethacrylate) between inert electrodes (graphite, molybdenum, NESA glass). The memory off‐state is highly linear, in contrast to the corresponding characteristics of multicomponent chalcogenide glasses. Switching speeds are probably similar or, at any rate, ≪10−7 sec.Keywords
This publication has 14 references indexed in Scilit:
- A model for an amorphous semiconductor memory deviceJournal of Non-Crystalline Solids, 1972
- Electrothermal switching in amorphous semiconductorsJournal of Non-Crystalline Solids, 1972
- Nature of the on-state in chalcogenide glass threshold switchesJournal of Non-Crystalline Solids, 1972
- Amorphous Semiconductor SwitchingNature, 1972
- Bistable Electrical Switching in Polymer Thin FilmsApplied Physics Letters, 1971
- Bistable switching and memory devicesJournal of Non-Crystalline Solids, 1970
- Electrical Switching Phenomena in Transition Metal Glasses under the Influence of High Electric FieldsPhysica Status Solidi (b), 1969
- Switching properties of thin Nio filmsSolid-State Electronics, 1964
- Observations of Negative Resistance Phenomena and Oscillations in Si-SiO2-Metal DiodesJapanese Journal of Applied Physics, 1964
- Low-Frequency Negative Resistance in Thin Anodic Oxide FilmsJournal of Applied Physics, 1962