High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/ $\mathrm{cm}^{2}$ Figure of Merit
Authors:
- 14 January 2015
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 62 (3) , 776-781
Abstract
In this paper, the partial gate recess for performance improvement of enhancement-mode (E-mode) GaN power devices is experimentally demonstrated. The gate recess with a careful control of the recess depth was performed with an optimized recessed barrier thickness of ~1.5 nm that is thin enough to completely deplete the 2-D electron gas channel in the gate region. Meanwhile, the remaining barrier preserves the as-grown quantum well of the heterostructure physically intact and thus, effectively mitigates the lattice damage caused by gate recess. The fabricated E-mode Al 2 O 3 /AlGaN/GaN MISFETs deliver a threshold voltage (V TH ) of +1.5 V. The maximum drain current density (I D,max ) and transconductance (G m,max ) are 693 mA/mm and 166 mS/mm, respectively. The MISFETs with an L GD of 10 μm feature an OFF-state breakdown voltage of 860 V at a leakage current of 1 μA/mm. The corresponding specific ON-resistance (R ON,sp ) is as low as 1.18 mΩ·cm 2 yielding a high-power figure of merit of 626 MW/cm 2 . In comparison with the reference MOSFETs by fully gate recess, the respectably improved device performance of the MISFETs attributes to the enhanced electron mobility achieved by the partial gate recess.Keywords
Funding Information
- National Science and Technology Major Project 02 (2013ZX02308-005)
- Fundamental Research Funds for the Central Universities (ZYGX2013J038)
- National Natural Science Foundation of China (61234006, 61306102, 61474138)
This publication has 25 references indexed in Scilit:
- 900 V/1.6 ${\rm m}\Omega\cdot{\rm cm}^{2}$ Normally Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET on Silicon SubstrateIEEE Transactions on Electron Devices, 2014
- 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current CollapseIEEE Electron Device Letters, 2013
- High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess TechniqueIEEE Electron Device Letters, 2013
- High-Performance GaN MOSFET With High-$\kappa$$\hbox{LaAlO}_{3}/\hbox{SiO}_{2}$ Gate DielectricIEEE Electron Device Letters, 2011
- Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility TransistorsJapanese Journal of Applied Physics, 2011
- Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFETIEEE Electron Device Letters, 2011
- Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate DielectricsIEEE Electron Device Letters, 2010
- Recessed-gate enhancement-mode GaN HEMT with high threshold voltageElectronics Letters, 2005
- Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistorsApplied Physics Letters, 2000
- Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistorsApplied Physics Letters, 1998