LPE and VPE In1-xGaxAsyP1-y/InP: Transport properties, defects, and device considerations
Authors:
- Joseph KuJKJoseph Ku
- S. OwenSOS. Owen
- G. OlsenGOG. Olsen
- Sun-Hai ChiaoSCSun-Hai Chiao
- 1 February 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (2) , 150-161
Abstract
No abstract availableKeywords
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