Quasi van der Waals epitaxy nitride materials and devices on two dimension materials
Authors:
- Dongdong LiangDLDongdong Liang
- Tongbo WeiTWTongbo Wei
- Junxi WangJWJunxi Wang
- Jinmin LiJLJinmin Li
- 1 March 2020
- journal article
- review article
- Published by Elsevier in Nano Energy
- Vol. 69
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China
- National Basic Research Program of China
- Natural Science Foundation of Beijing Municipality
This publication has 173 references indexed in Scilit:
- One-step graphene coating of heteroepitaxial GaN filmsNanotechnology, 2012
- A roadmap for grapheneNature, 2012
- Layered boron nitride as a release layer for mechanical transfer of GaN-based devicesNature, 2012
- Graphene–Multilayer Graphene Nanocomposites as Highly Efficient Thermal Interface MaterialsNano Letters, 2012
- Graphene photonics and optoelectronicsNature Photonics, 2010
- Evolution of Electrical, Chemical, and Structural Properties of Transparent and Conducting Chemically Derived Graphene Thin FilmsAdvanced Functional Materials, 2009
- Superior Thermal Conductivity of Single-Layer GrapheneNano Letters, 2008
- Luminescence properties of defects in GaNJournal of Applied Physics, 2005
- InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structuresApplied Physics Letters, 2004
- Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material systemJournal of Applied Physics, 2003