Theoretical comparison of the stability characteristics of capped and uncapped GexSi1−x strained epilayers
Authors:
- S.C. JainSJS.C. Jain
- T.J. GoslingTGT.J. Gosling
- J.R. WillisJWJ.R. Willis
- R. BulloughRBR. Bullough
- P. BalkPBP. Balk
- 31 August 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (8) , 1073-1079
Abstract
No abstract availableKeywords
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