Unique extraction of substrate parameters of common-source MOSFETs
Authors:
- Chung-Hwan KimCKChung-Hwan Kim
- Cheon Soo KimCKCheon Soo Kim
- Hyun Kyu YuHYHyun Kyu Yu
- Kee Soo NamKNKee Soo Nam
- 1 March 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 9 (3) , 108-110
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- An isolated-open pattern to de-embed pad parasitics [CMOSFETs]IEEE Microwave and Guided Wave Letters, 1998
- A novel approach to extracting small-signal model parameters of silicon MOSFET'sIEEE Microwave and Guided Wave Letters, 1997
- On-chip matching Si-MMIC for mobile communication terminal application1997
- Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETsIEEE Microwave and Guided Wave Letters, 1997
- High Q CMOS-compatible microwave inductors using double-metal interconnection silicon technologyIEEE Microwave and Guided Wave Letters, 1997
- High-frequency performance of submicrometer channel-length silicon MOSFETsIEEE Electron Device Letters, 1991
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988