Supercapacitors and micro-supercapacitors are promising capacitive energy storage devices for portable electronics and microelectromechanical systems. However, their low volumetric energy and power density as compared to batteries might limit them from many practical applications. In this research, the low-dimension MoS2/graphene oxide nanocomposite (MoS2/C NC) was successfully synthesized by a simple hydrothermal approach and utilized it as an electrode material for supercapacitor applications. The obtained materials were systematically investigated by various characterization techniques. Field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HR-TEM) were used to evaluate surface morphology, microstructure and crystallite size; while the X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) and Raman spectroscopy were used to analyze phase and chemical composition of the synthesized samples. The electrochemical capacitance properties were measured by cyclic voltammetry (CV) and electrochemical impedance spectroscope (EIS) techniques. From FE-SEM and HR-TEM results, it was evident that ultrathin two-dimensional (2D) MoS2 crystals were in-situ grown on the graphene oxide surface, resulting in rich porous three-dimensional (3D) architecture. The thickness and average lateral size of MoS2 crystals by HRTEM were around ~1.8–3.5 nm (~3–6 nm layers) and ~200–300 nm, respectively. The results of XRD, Raman, and XPS studies confirm that the as-grown MoS2 crystals have a predominantly hexagonal phase structure (2H-MoS2). Interestingly, thin film electrode prepared from the MoS2/C NC shows a high specific capacitance of ~118.5 F g−1 under 1 A g−1 with electrochemical active surface area of ~218.0 m2 g−1. The obtained high energy density of ~88.0 Wh kg−1 and a power density of ~367.0 W kg−1, along with low charge transfer resistance of the synthesized MoS2/C NC which make it a promising candidate for supercapacitor applications.