Modulation-doped field-effect transistor based on a two-dimensional hole gas
Authors:
- 1 June 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (11) , 1062-1064
Abstract
We report the successful operation of the first p‐type, modulation‐doped field‐effect transistor ( p‐MODFET). The channel consists of a two‐dimensional hole gas at a GaAs/(AlGa)As heterostructureinterface. With a gate length of 2 μm and a source‐drain distance of 7 μm we achieve transconductances of 28 mS/mm at 77 K and 44 mS/mm at 4.2 K. This work represents the first demonstration of a p‐type transistor that is the complement of the conventional n‐MODFET.Keywords
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