Hole Trapping in Molecularly Doped Polymers: The Hoesterey-Letson Formalism

Authors:
  • PBP. M. Borsenberger
    P. M. Borsenberger
  • WGW. T. Gruenbaum
    W. T. Gruenbaum
  • EME. H. Magin
    E. H. Magin
  • DSD. E. Schildkraut
    D. E. Schildkraut
  • SVS. A. Visser
    S. A. Visser
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Abstract
Hole trapping has been investigated in di-p-anisyl-p-tolylamine (DAT), tri-p-tolylamine (TTA), di-p-tolylphenylamine (DTP), and diphenyl-p-tolylamine (DPT) doped poly(styrene) containing different concentrations of tri-p-anislyamine (TAA). From oxidation potential measurements, TAA is a trap for DAT, TTA, DTP, and DPT with depths 0.07, 0.22, 0.27, and 0.34 eV, respectively. In such a way, it is possible to investigate the effect of trap depth using the same trap molecule. The mobilities decrease with increasing trap depth and concentration. For a TAA molar concentration of 10-2, the room temperature mobilities are suppressed by as much as four orders of magnitude. The results are compared to predictions of the Hoesterey-Letson formalism and discussed within the framework of the recent simulations of Wolf et al.. [Chem. Phys. 222 (1997) 259] and Borsenberger et al.. (submitted to Chem. Phys.)

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