Thermal Parameters of Monocrystalline GaN Schottky Diodes
- 9 April 2019
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 66 (5) , 2132-2138
Abstract
The aim of this paper is to compare the thermal properties of monocrystalline GaN devices assembled to direct bonding copper (DBC) substrate by silver sintering and solid–liquid interdiffusion (SLID) techniques. The construction of the examined diodes is described and selected results of measurements of thermal parameters of the tested diodes are discussed. It was concluded that the lowest values of thermal resistance between the junction and the case are achieved using the SLID technique, despite the fact that this process was performed at a lower temperature. Moreover, it was concluded that the method of assembly of a package to the heat sink has influence on thermal resistance between the junction and the surroundings.Keywords
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