Gettering of Copper to Oxidation Induced Stacking Faults in Silicon
Authors:
- 16 February 1990
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 117 (2) , 403-408
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline FilmsSolid State Phenomena, 1989
- Characterization of haze-forming precipitates in siliconJournal of Applied Physics, 1988
- The crystal structure of η-Cu3Si precipitates in siliconActa Crystallographica Section A, 1978
- Precipitation of copper in siliconJournal of Applied Physics, 1973
- Precipitate Colonies in SiliconJournal of Applied Physics, 1972
- Precipitation in High-Purity Silicon Single CrystalsJournal of Applied Physics, 1971