A voltage uniformity study in large-area reactors for RF plasma deposition
Authors:
- L SansonnensLSL Sansonnens
- A PletzerAPA Pletzer
- D MagniDMD Magni
- A A HowlingAHA A Howling
- Ch HollensteinCHCh Hollenstein
- J P M SchmittJSJ P M Schmitt
- 1 May 1997
- journal article
- Published by IOP Publishing in Plasma Sources Science and Technology
- Vol. 6 (2) , 170-178
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Very High Frequency Glow Discharge: Plasma- and Deposition AspectsSolid State Phenomena, 1995
- Very high-frequency capacitively coupled argon dischargesPlasma Sources Science and Technology, 1994
- Analysis of high-rate a-Si:H deposition in a VHF plasmaJournal of Physics D: Applied Physics, 1993
- Verification of frequency scaling laws for capacitive radio-frequency discharges using two-dimensional simulations*Physics of Fluids B: Plasma Physics, 1993
- Frequency effects in silane plasmas for plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1992
- Influences of a high excitation frequency (70 MHz) in the glow discharge technique on the process plasma and the properties of hydrogenated amorphous siliconJournal of Applied Physics, 1992
- Capacitively coupled glow discharges at frequencies above 13.56 MHzApplied Physics Letters, 1991
- Amorphous silicon deposition: Industrial and technical challengesThin Solid Films, 1989
- Influence of plasma excitation frequency fora-Si:H thin film depositionPlasma Chemistry and Plasma Processing, 1987
- The Planar Circuit - An Approach to Microwave Integrated CircuitryIEEE Transactions on Microwave Theory and Techniques, 1972