Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures
Authors:
- 27 March 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (13) , 1737-1739
Abstract
Temperature-dependent photoluminescence and transport measurements were performed on the In0.13Ga0.87N:Si/GaN:Si multiple-quantum-well (MQW) structures with different doping levels. By fitting the temperature-dependent emission energy of these samples using the band tail model, an obvious localization effect is observed in lightly doped MQW structures. Correspondingly, the electron mobilities in these structures are significantly higher than those of undoped and heavily doped MQW structures. Furthermore, when the localization effect is stronger, the mobility is higher.Keywords
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