Magneto-ionic and electrostatic gating of magnetism: Phenomena and devices
- 25 September 2023
- journal article
- editorial
- Published by AIP Publishing in Applied Physics Letters
- Vol. 123 (13)
Abstract
A large portion of the ongoing research in spintronics is focused on advancing magnetic memory designs to not only provide improved capabilities but also operatKeywords
This publication has 13 references indexed in Scilit:
- Controlling interface anisotropy in CoFeB/MgO/HfO2 using dusting layers and magneto-ionic gatingApplied Physics Letters, 2023
- Engineering Co/MgO interface with heavy metals for voltage-controlled magnetic anisotropy effectApplied Physics Letters, 2023
- Insight on hydrogen injection and GdOx/Co interface chemistry from in operando neutron reflectometry and secondary ion mass spectrometryApplied Physics Letters, 2023
- Voltage-gated spin-orbit torque switching in IrMn-based perpendicular magnetic tunnel junctionsApplied Physics Letters, 2023
- Voltage control of magnetic properties in GdxFe100-x films by hydrogen migrationApplied Physics Letters, 2022
- Voltage control of frequency, effective damping, and threshold current in nano-constriction-based spin Hall nano-oscillatorsApplied Physics Letters, 2022
- Controlling the creation/annihilation and distribution of magnetic skyrmions by manipulating an externally applied voltageApplied Physics Letters, 2022
- Magneto-ionic enhancement and control of perpendicular magnetic anisotropyApplied Physics Letters, 2022
- Voltage-controlled magnetic anisotropy effect through a LiF/MgO hybrid tunneling barrierApplied Physics Letters, 2022
- Ionic liquid modulation of exchange bias in epitaxial LaMnO3 thin filmsApplied Physics Letters, 2022