Nonlinear absorption in undoped and Ge doped layered GaSe semiconductor crystals
- 24 July 2009
- journal article
- research article
- Published by Springer Nature in Applied Physics B
- Vol. 98 (1) , 77-81
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Effect of self assembly on the nonlinear optical characteristics of ZnO thin filmsOptics Communications, 2008
- Anisotropy of two-photon absorption in gallium selenide at 1064nmOptics Communications, 2006
- Two-photon excited room-temperature luminescence of CdS in the femtosecond regimePhysical Review B, 1999
- Transport and optical properties of the layer semiconductor p-type GaSe doped with LiPhilosophical Magazine Letters, 1999
- Two-photon absorption in GaSe and CdGeAs2Optics Communications, 1998
- Electrical properties of n-GaSe single crystals doped with chlorineJournal of Applied Physics, 1997
- Electrical properties of layer semiconductor p-GaSe doped with CuJournal of Applied Physics, 1996
- Sensitive measurement of optical nonlinearities using a single beamIEEE Journal of Quantum Electronics, 1990
- Polytypism in the III–VI layer compoundsProgress in Crystal Growth and Characterization, 1983
- The band structures of gallium and indium selenideJournal of Physics C: Solid State Physics, 1977