Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]
Authors:
- 28 July 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (4) , 229
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974