Abstract
We demonstrate the possibility to create materials with chosen refractive indices and a strong birefringence in the terahertz range by etching of patterns with appropriate filling factors in a dielectric substrate. We show that by using deep inductive plasma etching of silicon wafers, it is possible to achieve a birefringence as high as 1.2 in an 80 μm thick layer. The resulting stacks were used as building blocks for a photonic crystal displaying sharp defect mode peaks in transmittance.
Funding Information
  • Ministry of Education
  • Academy of Sciences of the Czech Republic

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