Chemical Lift-Off Process for Blue Light-Emitting Diodes
Authors:
- Chia-Feng LinCLChia-Feng Lin
- Jing-Jie DaiJDJing-Jie Dai
- Guei-Miao WangGWGuei-Miao Wang
- Ming-Shiou LinMLMing-Shiou Lin
- 27 August 2010
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 3 (9)
Abstract
An epitaxial layer of an InGaN light-emitting diode (LED) structure was separated from a truncated-triangle-striped patterned-sapphire substrate through a chemical lift-off (CLO) process. A crystallographic stable and terminated V-shaped GaN grooved pattern was observed on the lift-off GaN surface. A peak wavelength blueshift phenomenon of the micro-photoluminescence spectrum was observed on the lift-off LED epitaxial layer (440.7 nm) compared with the LED/sapphire structure (445.8 nm). The free-standing LED epitaxial layer with a 453 nm electroluminescence emission spectrum was realized through a CLO process with the potential to replace the traditional laser lift-off process for vertical LED applications. (c) 2010 The Japan Society of Applied PhysicKeywords
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