Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide

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Abstract
Thin‐film ferroelectric of HfO2‐based has gained broad interest for non‐volatile memories. The traditional theory with respect to doped hafnium oxide is based on the polycrystalline structure of the Pcb21 non‐centrosymmetric orthorhombic phase. While amorphous oxides also show ferroelectricity, which cannot be explained by the traditional theory. Here, ferroelectric‐like behavior is observed in the amorphous oxide‐based TaN/high‐k/Si system. Through strategically modulating the atomic layer of deposition conditions of the high‐k oxides, the evolution from paraelectric to ferroelectric‐like behavior is seen in TaN/Al2O3/Si capacitors. The interface chemistry of these stacks is systematically studied via in situ angle‐resolved X‐ray photoelectron spectroscopy. A mechanism for the ferroelectric‐like behavior is proposed based on interface ions‐vacancies displacement. This work sheds light on physics in ferroelectric‐like thin film devices.
Funding Information
  • National Key Research and Development Program of China (2018YFB2200500, 2018YFB2200504)
  • National Natural Science Foundation of China (22090010, 22090911, 61504070)

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