A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology

Authors:
  • DDD.P. Docter
    D.P. Docter
  • YBY.K. Brown
    Y.K. Brown
  • AKA.R. Kramer
    A.R. Kramer
  • JJJ.F. Jensen
    J.F. Jensen
  • STS. Thomas
    S. Thomas
  • CFC.H. Fields
    C.H. Fields
  • DAD.A. Ahmari
    D.A. Ahmari
  • MLM. Lui
    M. Lui
  • RMR. Martinez
    R. Martinez
  • JDJ. Duvall
    J. Duvall
Publisher website
Google Scholar
Abstract
We have demonstrated a 52.9 GHz static 1/8 divider in an AlInAs/InGaAs HBT technology. To our knowledge this is the fastest static divider reported in any semiconductor technology. The divider was realized in a high yield optical lithography triple mesa HBT process. At maximum speed, power consumption was 40 mW/flip-flop. A second 1/8 divider, designed for lower power but using the same size transistors, consumed 8.6 mW/flip-flop at 35 GHz. Sensitivity was excellent with the high-speed version operating from DC to 48 GHz with less than 0 dBm input power. Uniformity and reproducibility were also demonstrated; all functional dividers operated above 45 GHz on-wafer and the extrapolated yield of dividers indicates that the process is capable of supporting 500-1000 transistor designs. Circuit performance was relatively insensitive to the details of the device epitaxial structure indicating a highly robust and manufacturable process.