Photoluminescence and the band structure of InAsSb strained-layer superlattices
Authors:
- 18 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (3) , 216-218
Abstract
Infrared photoluminescence measurements were performed on InAs0.13Sb0.87 /InSb strained-layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of the band offsets and strain shifts obtained from the photoluminescence data.Keywords
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