Si/6H–SiC(0001): An unexpected cubic 4×3 Si phase overlayer

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6 August 2001

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 79 (6) , 767-769
DOI:10.1063/1.1389510

Abstract

We investigate Si deposition on the 6H–SiC(0001) 3×3 surface reconstruction by atom-resolved scanning tunneling microscopy. Upon thermal annealing, the Si thin film forms an unexpected structure having dimer rows in a cubic 4×3 surface array. Such a 4×3 Si phase has a very open surface very likely being at the origin of the exceptionally high reactivity to oxygen of the Si/6H–SiC(0001) system. These findings are relevant in siliconcarbideoxidation.

Keywords

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