Positron Mobility Measurements and Their Relevance to Defect and Impurity Studies in Semiconductors and Insulators
Authors:
- 16 August 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 102 (2) , 537-547
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- The Positron as a Probe for Studying Bulk and Defect Properties in SemiconductorsAnnalen der Physik, 1986
- Positron diffusion in germaniumPhysical Review B, 1984
- Anomalous Temperature Dependence of the Positron Diffusion Constant in GePhysical Review Letters, 1981
- Theory of positronium formation and positron emission at metal surfacesPhysical Review B, 1980
- Profiles and absorption coefficients of positrons implanted in solids from radioactive sourcesPhysics Letters A, 1979
- Mobility of positrons in siliconPhysics Letters A, 1977
- Influence of defects and temperature on the annihilation of positrons in neutron-irradiated siliconPhysical Review B, 1976
- Hot Electrons in Germanium and Ohm's LawBell System Technical Journal, 1951
- Deformation Potentials and Mobilities in Non-Polar CrystalsPhysical Review B, 1950
- Theory of Impurity Scattering in SemiconductorsPhysical Review B, 1950