Particulate generation in silane/ammonia rf discharges
Authors:
- 1 May 1990
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (9) , 3999-4011
Abstract
The rate of particle generation in a SiH4/NH3 rf discharge has been studied as a function of the discharge operating parameter space, electrode geometry, and power supply coupling mode. Measurements of the bulk quantity of particles produced in the discharge reveal that the mode of coupling (capacitive or dc) as well as the electrode temperature significantly affects particle generation rates. Laser light scattering measurements made as a function of the plasma power density indicate that particle generation abruptly ceases at a threshold value sufficient to induce spark breakdown at the cathode. Based on these observations, it is shown that particle growth in plasmas can be modeled entirely as a heterogeneous process. The initiation of particle growth is shown to be consistent with an electron surface desorption model involving vibrational excitation of surface clusters. Propagation of growth in the gas phase is shown to be consistent with an eliminative ion‐molecular condensation reaction, and the pressure dependence of this mechanism is exploited to estimate a value for the rate constants for SiH4 and NH3 condensation in SiN:H particle growth.Keywords
This publication has 21 references indexed in Scilit:
- Glow-discharge synthesis of silicon nitride precursor powdersJournal of Materials Research, 1989
- Velocity persistence of Brownian particles generated in a glow dischargePhysical Review Letters, 1989
- Particle densities in radio-frequency discharges of silaneThe Journal of Physical Chemistry, 1988
- FT-ICR probes of silicon cluster chemistry: The special behavior of Si+39The Journal of Chemical Physics, 1987
- Studies of gas-phase reactions of silicon cation clusters, Sin+, using Fourier transform mass spectrometryThe Journal of Physical Chemistry, 1987
- Mechanism of sputtering of large biomolecular ions by impact of highly ionizing particlesPhysical Review Letters, 1987
- Bonds and Defects in Plasma-Deposited Silicon Nitride Using SiH4-NH3-Ar MixtureJapanese Journal of Applied Physics, 1986
- Computer simulation of thin film nucleation and growthJournal of Applied Physics, 1985
- Ion-polar molecule collisions: Nonreactive collisions of Cl− with dichloroethylene and difluorobenzeneThe Journal of Chemical Physics, 1974
- Polarizabilities from δ-Function Potentials1a,bThe Journal of Physical Chemistry, 1964