Two-step thermal quenching of photoluminescence in Zn-doped GaN
- 4 June 2012
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 85 (24)
Abstract
We observed tunable two-step thermal quenching of photoluminescence in high-resistivity Zn-doped GaN. The characteristic temperatures of the first and second steps increase with increasing excitation intensity. The effect is explained within a phenomenological model involving shallow donors, nonradiative deep donors, and two types of acceptors.Keywords
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