Photoemission from p-GaAs(001) with nonequilibrium cesium overlayers
- 28 December 2013
- journal article
- Published by Pleiades Publishing Ltd in JETP Letters
- Vol. 98 (8) , 455-459
Abstract
The dependences of the photoemission current and effective electron affinity on the submonolayer cesium coverage at the adsorption of Cs on a GaAs(001) surface, as well as the kinetics of the...Keywords
This publication has 14 references indexed in Scilit:
- Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surfaceJETP Letters, 2009
- Cesium-induced surface conversion: From As-rich to Ga-rich GaAs(001) at reduced temperaturesPhysical Review B, 2005
- Surface passivation and morphology of GaAs(1 0 0) treated in HCl-isopropanol solutionApplied Surface Science, 2004
- Decrease in the bond energy of arsenic atoms on the GaAs(100)-(2×4)/c(2×8) surface due to the effect of adsorbed cesiumJETP Letters, 2004
- Cs/GaAs(100) surface: Two-dimensional metal or Hubbard insulator?JETP Letters, 1999
- Alkali metal/GaAs(110) interfaces: correlation effects and sub-gap electron energy loss spectraSurface Science, 1998
- ‘Stable to unstable’ transition in the (Cs, O) activation layer on GaAs (100) surfaces with negative electron affinity in extremely high vacuumApplied Surface Science, 1996
- Domination of adatom-induced over defect-induced surface states onp-type GaAs(Cs,O) at room temperaturePhysical Review B, 1994
- Semiconductor-to-metal transition in an ultrathin interface: Cs/GaAs(110)Physical Review Letters, 1990
- Adsorption Kinetics of Cs on GaAsJournal of Applied Physics, 1972