Causes of asymmetry in graphene transfer characteristics
Authors:
- 1 May 2010
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 9, 1-3
Abstract
Back-gated graphene field-effect transistor (FET) with Carrier mobility values over 8000 cm2/Vs is fabricated. Contact resistances and carrier motilities are extracted from an established model. We investigate the asymmetry in its transfer characteristics and attribute it to the differences in contact resistances modulated by the back gate voltages and distinct mobility of electrons and holes. The experimental results are analyzed quantitatively and the mechanisms are discussed.Keywords
This publication has 10 references indexed in Scilit:
- Metal/graphene contact as a performance Killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance2009
- Origin of spatial charge inhomogeneity in grapheneNature Physics, 2009
- Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality pointSolid State Communications, 2009
- Graphene Frequency MultipliersIEEE Electron Device Letters, 2009
- Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectricApplied Physics Letters, 2009
- Photocurrent Imaging and Efficient Photon Detection in a Graphene TransistorNano Letters, 2009
- Operation of Graphene Transistors at Gigahertz FrequenciesNano Letters, 2008
- Current saturation in zero-bandgap, top-gated graphene field-effect transistorsNature Nanotechnology, 2008
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphenePhysical Review B, 2008
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004