Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1−xAs/AlGaAs pHEMT
Authors:
- Jun-Chin HuangJHJun-Chin Huang
- Wei-Chou HsuWHWei-Chou Hsu
- Wei-Chen ChangWCWei-Chen Chang
- Dong-Hai HuangDHDong-Hai Huang
- 18 October 2006
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 21 (12) , 1675-1680
Abstract
No abstract availableKeywords
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