Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics

This publication has 35 references indexed in Scilit:

• Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing
  Applied Physics Letters, 2012
• Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures
  Solid-State Electronics, 2005
• Demonstration of 4H-SiC UV single photon counting avalanche photodiode
  Electronics Letters, 2005
• Microstructural interpretation of Ni ohmic contact on n-type 4H–SiC
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002
• Influence of annealing on reverse current of 4H–SiC Schottky diodes
  Diamond and Related Materials, 2002
• Effect of Interfacial Reactions on Electrical Properties of Ni Contacts on Lightly Doped n-Type 4H-SiC
  Journal of the Electrochemical Society, 2002
• Improved Ni/SiC Schottky diode formation
  Electronics Letters, 2000
• Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers
  IEEE Transactions on Electron Devices, 1999
• Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts
  IEEE Transactions on Electron Devices, 1996
• Capacitance Transient Spectroscopy
  Annual Review of Materials Science, 1977