Preparation of Cubic Boron Nitride Films by RF Sputtering
Authors:
- Masahiro MienoMMMasahiro Mieno
- Toyonobu YoshidaTYToyonobu Yoshida
- 1 July 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (7A) , L1175
Abstract
Cubic boron nitride (c-BN) films have been prepared by sputtering of a hexagonal BN sintered target under a negative self-bias voltage applied to Si substrates and a sputtering gas composition of Ar/N2. A c-BN phase was found to be contained only in the films prepared in pure Ar discharge with a negative self-bias above a threshold value. Moreover, the ratio of c-BN to hexagonal boron nitride increased with increasing negative self-bias voltage. The films consisting mainly of the c-BN phase were easily peeled from Si substrates on exposure to air because of their strong compressive stress.Keywords
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