Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Films of Uniform a -Axis Orientation on Silicon Substrates

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Abstract
The use of bismuth-layered perovskite films for planar-type nonvolatile ferroelectric random-access memories requires films with spontaneous polarization normal to the plane of growth. Epitaxially twinned a axis–oriented La-substituted Bi 4 Ti 3 O 12 (BLT) thin films whose spontaneous polarization is entirely along the film normal were grown by pulsed laser deposition on yttria-stabilized zirconia-buffered Si(100) substrates using SrRuO 3 as bottom electrodes. Even though the (118) orientation competes with the (100) orientation, epitaxial films with almost pure (100) orientation were grown using very thin, strained SrRuO 3 electrode layers and kinetic growth conditions, including high growth rates and high oxygen background pressures to facilitate oxygen incorporation into the growing film. Films with the a -axis orientation and having their polarization entirely along the direction normal to the film plane can achieve a remanent polarization of 32 microcoulombs per square centimeter.

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