Deterministic Manipulation of Multi‐State Polarization Switching in Multiferroic Thin Films

Authors:
Publisher website
Google Scholar
Abstract
Deterministically controllable multi‐state polarizations in ferroelectric materials are promising for the application of next‐generation non‐volatile multi‐state memory devices. However, the achievement of multi‐state polarizations has been inhibited by the challenge of selective control of switching pathways. Herein, an approach to selectively control 71° ferroelastic and 180° ferroelectric switching paths by combining the out‐of‐plane electric field and in‐plane trailing field in multiferroic BiFeO3 thin films with periodically ordered 71° domain wall is reported. Four‐state polarization states can be deterministically achieved and reversibly controlled through precisely selecting different switching paths. These studies reveal the ability to obtain multiple polarization states for the realization of multi‐state memories and magnetoelectric coupling‐based devices.
Funding Information
  • National Natural Science Foundation of China (91963102, U1832104)
  • Natural Science Foundation of Guangdong Province (2020A1515010736)

This publication has 43 references indexed in Scilit: