Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits

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Abstract
Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.
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Funding Information
  • Oak Ridge Institute for Science and Education
  • Defense Advanced Research Projects Agency (W31P4Q-15-1-0010)
  • Intelligence Community Postdoctoral Research Fellowship Program
  • Division of Electrical, Communications and Cyber Systems (1506473)

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